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dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorYeh, Jui-Lungen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorLou, Jen-Chungen_US
dc.contributor.authorYeh, Ching-Faen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:13:29Z-
dc.date.available2014-12-08T15:13:29Z-
dc.date.issued2007-08-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2760144en_US
dc.identifier.urihttp://hdl.handle.net/11536/10425-
dc.description.abstractThe formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.en_US
dc.language.isoen_USen_US
dc.titleNonvolatile memory characteristics of nickel-silicon-nitride nanocrystalen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2760144en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000248984800046-
dc.citation.woscount14-
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