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dc.contributor.authorChuang Ching-Teen_US
dc.contributor.authorYang Hao-Ien_US
dc.contributor.authorLin Yi-Weien_US
dc.contributor.authorHwang Weien_US
dc.contributor.authorShih Wei-Chiangen_US
dc.contributor.authorChen Chia-Chengen_US
dc.date.accessioned2014-12-16T06:14:07Z-
dc.date.available2014-12-16T06:14:07Z-
dc.date.issued2013-01-01en_US
dc.identifier.govdocG11C005/14zh_TW
dc.identifier.govdocG11C011/00zh_TW
dc.identifier.govdocG11C007/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104521-
dc.description.abstractA Random Access Memory (RAM) with a plurality of cells is provided. In an embodiment, the cells of a same column are coupled to a same pair of bit-lines and are associated to a same power controller. Each cell has two inverters; the power controller has two power-switches. For the cells of the same column, the two power-switches respectively perform independent supply voltage controls for the two inverters in each cell according to data-in voltages of the bit-lines during Write operation.zh_TW
dc.language.isozh_TWen_US
dc.titleData-aware dynamic supply random access memoryzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08345504zh_TW
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