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dc.contributor.authorWu, Chung-Yuen_US
dc.contributor.authorYu, Chi-Yaoen_US
dc.date.accessioned2014-12-08T15:13:33Z-
dc.date.available2014-12-08T15:13:33Z-
dc.date.issued2007-08-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMTT.2007.902067en_US
dc.identifier.urihttp://hdl.handle.net/11536/10466-
dc.description.abstractIn this paper, direct injection-locked frequency dividers (ILFDs), which operate in the millimeter-wave (MMW) band, are analyzed. An analytically equivalent model of the direct ILFD)s is developed, and important design guidelines for a large frequency locking range are obtained from it. These guidelines are: 1) maximize the quality factor of the passive load; 2) maintain low output amplitude; and 3) increase the dc overdrive voltage of the input device. A direct ILFD without varactors is designed and fabricated using a 0.13-mu m bulk CMOS process to verify the developed model and design guidelines. A pMOS current source is used to restrict the output amplitude and to increase the de overdrive voltage of the input device to achieve a large frequency locking range. The size of the input device is only 3.6 mu m/0.12 mu m and the measured frequency locking range is 13.6% at 70 GHz with a power consumption of 4.4 mW from a supply voltage of 1 V. In short, the proposed divider has the potential to be integrated into an MMW phase-locked loop system.en_US
dc.language.isoen_USen_US
dc.subjectfrequency locking rangeen_US
dc.subjectinjection-locked frequency divider (ILFD)en_US
dc.subjectmillimeter-wave (MMW) integrated CMOS circuiten_US
dc.subjectphase-locked loop (PLL)en_US
dc.subject0.13-mu m bulk CMOS technologyen_US
dc.titleDesign and analysis of a millimeter-wave direct injection-locked frequency divider with large frequency locking rangeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TMTT.2007.902067en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume55en_US
dc.citation.issue8en_US
dc.citation.spage1649en_US
dc.citation.epage1658en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248693600008-
dc.citation.woscount34-
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