| 标题: | Silicon controlled rectifier |
| 作者: | Ker MIng-Dou Lin Chun-Yu Wang Chang-Tzu |
| 公开日期: | 1-九月-2009 |
| 摘要: | A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type doped region is located within the first conductive type well and shaped as a polygonal ring concentric to the first conductive type well. |
| 官方说明文件#: | H01L029/02 H01L029/66 H01L029/06 H01L029/74 |
| URI: | http://hdl.handle.net/11536/104741 |
| 专利国: | USA |
| 专利号码: | 07582916 |
| 显示于类别： | Patents |
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- Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier / Ker;Ming-Dou;Hsu;Kuo-Chun
- Design of Fin-Diode-Triggered Rotated Silicon-Controlled Rectifier for High-Speed Digital Application in 16-nm FinFET Process / Chang, Rong-Kun;Lin, Chun-Yu;Ker, Ming-Dou
- Quad-SCR Device for Cross-Domain ESD Protection / Altolaguirre, Federico A.;Ker, Ming-Dou
- Low-Leakage Bidirectional SCR With Symmetrical Trigger Circuit for ESD Protection in 40-nm CMOS Process / Altolaguirre, Federico A.;Ker, Ming-Dou
- Investigation of Unexpected Latchup Path Between HV-LDMOS and LV-CMOS in a 0.25-mu m 60-V/5-V BCD Technology / Dai, Chia-Tsen;Ker, Ming-Dou
- Investigation on SCR-based ESD protection device for biomedical integrated circuits in a 0.18-mu m CMOS process / Lin, Chun-Yu;Chiu, Yan-Lian
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