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dc.contributor.authorKeren_US
dc.contributor.authorMIng-Douen_US
dc.contributor.authorLinen_US
dc.contributor.authorChun-Yuen_US
dc.contributor.authorWangen_US
dc.contributor.authorChang-Tzuen_US
dc.date.accessioned2014-12-16T06:14:28Z-
dc.date.available2014-12-16T06:14:28Z-
dc.date.issued2009-09-01en_US
dc.identifier.govdocH01L029/02zh_TW
dc.identifier.govdocH01L029/66zh_TW
dc.identifier.govdocH01L029/06zh_TW
dc.identifier.govdocH01L029/74zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104741-
dc.description.abstractA silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type doped region is located within the first conductive type well and shaped as a polygonal ring concentric to the first conductive type well.zh_TW
dc.language.isozh_TWen_US
dc.titleSilicon controlled rectifierzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07582916zh_TW
Appears in Collections:Patents


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