Silicon controlled rectifier for the electrostatic discharge protection

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DC Field	Value	Language
dc.contributor.author	Ker	en_US
dc.contributor.author	Ming-Dou	en_US
dc.contributor.author	Lin	en_US
dc.contributor.author	Kun-Hsien	en_US
dc.date.accessioned	2014-12-16T06:14:28Z	-
dc.date.available	2014-12-16T06:14:28Z	-
dc.date.issued	2009-06-02	en_US
dc.identifier.govdoc	H02H009/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104745	-
dc.description.abstract	The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Silicon controlled rectifier for the electrostatic discharge protection	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	07542253	zh_TW
Appears in Collections:	Patents

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