標題: Silicon controlled rectifier for the electrostatic discharge protection
作者: Ker, Ming-Dou
Lin, Kun-Hsien
公開日期: 8-十二月-2005
摘要: The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.
官方說明文件#: H02H009/00
URI: http://hdl.handle.net/11536/105719
專利國: USA
專利號碼: 20050270710
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