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dc.contributor.authorKeren_US
dc.contributor.authorMing-Douen_US
dc.contributor.authorLinen_US
dc.contributor.authorKun-Hsienen_US
dc.date.accessioned2014-12-16T06:14:28Z-
dc.date.available2014-12-16T06:14:28Z-
dc.date.issued2009-06-02en_US
dc.identifier.govdocH02H009/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104745-
dc.description.abstractThe present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.zh_TW
dc.language.isozh_TWen_US
dc.titleSilicon controlled rectifier for the electrostatic discharge protectionzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07542253zh_TW
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