標題: | Current limit circuit apparatus |
作者: | CHEN Tsung-Lin CHANG Edward Yi CHIENG Wei-Hua CHENG Stone JENG Shyr-Long HUANG Shin-Wei |
公開日期: | 19-Sep-2013 |
摘要: | The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current. |
官方說明文件#: | H03K003/00 |
URI: | http://hdl.handle.net/11536/104995 |
專利國: | USA |
專利號碼: | 20130241603 |
Appears in Collections: | Patents |
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