| 標題: | High-side driver circuit |
| 作者: | CHEN Tsung-Lin CHANG Edward Yi CHIENG Wei-Hua CHENG Stone JENG Shyr-Long CHANG Che-Wei |
| 公開日期: | 19-九月-2013 |
| 摘要: | The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source. |
| 官方說明文件#: | H03K003/00 |
| URI: | http://hdl.handle.net/11536/104996 |
| 專利國: | USA |
| 專利號碼: | 20130241601 |
| 顯示於類別: | 專利資料 |

