標題: High-side driver circuit
作者: CHEN Tsung-Lin
CHANG Edward Yi
CHIENG Wei-Hua
CHENG Stone
JENG Shyr-Long
CHANG Che-Wei
公開日期: 19-Sep-2013
摘要: The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.
官方說明文件#: H03K003/00
URI: http://hdl.handle.net/11536/104996
專利國: USA
專利號碼: 20130241601
Appears in Collections:Patents


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