III-V METAL-OXIDE-SEMICONDUCTOR DEVICE

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DC Field	Value	Language
dc.contributor.author	CHANG Edward Yi	en_US
dc.contributor.author	LIN Yueh-Chin	en_US
dc.date.accessioned	2014-12-16T06:14:59Z	-
dc.date.available	2014-12-16T06:14:59Z	-
dc.date.issued	2013-06-06	en_US
dc.identifier.govdoc	H01L029/78	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105039	-
dc.description.abstract	A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	III-V METAL-OXIDE-SEMICONDUCTOR DEVICE	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130140647	zh_TW
Appears in Collections:	Patents

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