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dc.contributor.authorCHEN KUAN-NENGen_US
dc.contributor.authorHsu Sheng-Yaoen_US
dc.date.accessioned2014-12-16T06:15:00Z-
dc.date.available2014-12-16T06:15:00Z-
dc.date.issued2013-03-21en_US
dc.identifier.govdocH01L023/48zh_TW
dc.identifier.govdocH01L021/60zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105065-
dc.description.abstractThe present invention discloses a bonding method for a three-dimensional integrated circuit and the three-dimensional integrated circuit thereof. The bonding method comprises the steps of: providing a substrate; depositing a film layer on the substrate; providing a light source to light onto the film layer to form a graphic structure; forming a metal co-deposition layer by a first metal and a second metal that are co-deposited on the film layer; providing a first integrated circuit having the substrate, the film layer and the metal co-deposition layer sequentially; providing a second integrated circuit that having the metal co-deposition layer, the film layer and the substrate sequentially; and the first integrated circuit is bonded with the second integrated circuit at a predetermined temperature to form a three-dimensional integrated circuit.zh_TW
dc.language.isozh_TWen_US
dc.titleBONDING METHOD FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT AND THREE-DIMENSIONAL INTEGRATED CIRCUIT THEREOFzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130069248zh_TW
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