Structure and process of basic complementary logic gate made by junctionless transistors

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DC Field	Value	Language
dc.contributor.author	Chung Steve S.	en_US
dc.contributor.author	Hsieh E. R.	en_US
dc.date.accessioned	2014-12-16T06:15:13Z	-
dc.date.available	2014-12-16T06:15:13Z	-
dc.date.issued	2012-05-24	en_US
dc.identifier.govdoc	H01L027/092	zh_TW
dc.identifier.govdoc	H01L021/782	zh_TW
dc.identifier.govdoc	H01L021/8238	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105177	-
dc.description.abstract	The present invention discloses a structure and process of basic complementary logic gate made by junctionless transistors. Junctionless N-channel transistor(s) and junctionless P-channel transistor(s) are formed on a semiconductor wafer, a conducting contact structure is used to connect the transistors to form a basic complementary logic gate(s) such as inverter, NAND, NOR, etc.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Structure and process of basic complementary logic gate made by junctionless transistors	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20120126197	zh_TW
Appears in Collections:	Patents

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