| 標題: | CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME |
| 作者: | Chin Albert |
| 公開日期: | 10-五月-2012 |
| 摘要: | The present invention related to a method for forming a capacitor device, comprising steps of: providing a substrate, forming a first metal layer on the substrate, forming a dielectric on the first metal layer, applying a laser-annealing to the dielectric, and forming a second metal layer on the dielectric. |
| 官方說明文件#: | H01G004/06 B23K026/00 |
| URI: | http://hdl.handle.net/11536/105185 |
| 專利國: | USA |
| 專利號碼: | 20120113561 |
| 顯示於類別： | 專利資料 |
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