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dc.contributor.authorHsu, Sheng-Fuen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:13:37Z-
dc.date.available2014-12-08T15:13:37Z-
dc.date.issued2007-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2007.901391en_US
dc.identifier.urihttp://hdl.handle.net/11536/10524-
dc.description.abstractThe bipolar (underdamped sinusoidal) transient noise on power pins of CMOS integrated circuits (ICs) can trigger latchup in CMOS ICs under system-level electrostatic-discharge test. Two dominant parameters of bipolar transient noise-damping frequency and damping factor-strongly depend on system shielding, board-level noise filter, chip-/board-level layout, etc. The transient-induced-latchup (TLU) dependence on power-pin damping frequency and damping factor was characterized by device simulation and verified by experimental measurement. From the simulation results, bipolar-trigger waveforms with damping frequencies of several tens of megahertz can trigger the TLU.most easily. However, TLU is less sensitive to the bipolar-trigger waveforms with an excessively large damping factor or an excessively low/high damping frequency. The simulation results have been experimentally verified with the silicon-controlled-rectifier (SCR) test structures that are fabricated in a 0.25-mu m CMOS technology.en_US
dc.language.isoen_USen_US
dc.subjectbipolar-trigger voltageen_US
dc.subjectlatchupen_US
dc.subjectsilicon-controlled rectifier (SCR)en_US
dc.subjectsystem-level electrostatic-discharge (ESD) testen_US
dc.subjecttransient-induced latchup (TLU)en_US
dc.titleTransient-induced latchup dependence on power-pin damping frequency and damping factor in CMOS integrated circuitsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2007.901391en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume54en_US
dc.citation.issue8en_US
dc.citation.spage2002en_US
dc.citation.epage2010en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248390600024-
dc.citation.woscount2-
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