Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs

標題:	Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs
作者:	Kuo, Yan-Fu Tai, Ya-Hsiang 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
關鍵字:	UPS TFT;temperature dependence;variation;scattering mechanism
公開日期:	1-Aug-2007
摘要:	In recent years, low temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) has been widely investigated for various applications to system-on-panel (SOP) technology. However, due to the complexity of grain boundary trap properties, the conducting behaviors of various LTPS TFTs are difficult to be analyzed systematically. In this paper, the common and device-dependent thermal effects are studied to understand the conduction mechanism in the UPS TFTs. (c) 2007 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2007.05.015 http://hdl.handle.net/11536/10525
ISSN:	0038-1101
DOI:	10.1016/j.sse.2007.05.015
期刊:	SOLID-STATE ELECTRONICS
Volume:	51
Issue:	8
起始頁:	1092
結束頁:	1095
Appears in Collections:	Articles

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