SILICON CONTROLLED RECTIFIER

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ker, Ming-Dou	en_US
dc.contributor.author	Lin, Chun-Yu	en_US
dc.contributor.author	Wang, Chang-Tzu	en_US
dc.date.accessioned	2014-12-16T06:15:47Z	-
dc.date.available	2014-12-16T06:15:47Z	-
dc.date.issued	2009-07-16	en_US
dc.identifier.govdoc	H01L029/747	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105508	-
dc.description.abstract	A silicon controlled rectifier structure of polygonal layouts is provided. The polygonal first conductive type doped region is located in the middle of the polygonal second conductive type well. The first conductive type well shaped as a polygonal ring surrounds the second conductive type well and the second conductive type doped region is located within the first conductive type well and shaped as a polygonal ring concentric to the first conductive type well.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	SILICON CONTROLLED RECTIFIER	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20090179222	zh_TW
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