标题: | Fabrication of microcavity light-emitting diodes using highly reflective AlN-GaN and Ta2O5-SiO2 distributed Bragg mirrors |
作者: | Huang, G. S. Lu, T. C. Kuo, H. C. Wang, S. C. Chen, Hou-Guang 光电工程学系 Department of Photonics |
关键字: | distributed Bragg reflector (DBR);GaN;microcavity light-emitting diode (MCLED) |
公开日期: | 1-七月-2007 |
摘要: | We report the fabrication of microcavity light-emitting diodes (MCLEDs) with high reflectivity and crack-free AIN-GaN distributed Bragg reflector (DBR). The 5 lambda microcavity structure consists of an n-type GaN, ten pairs InGaN-GaN multiple quantum wells and p-type GaN sandwiched between the hybrid cavity mode of an AIN-GaN and a Ta2O5-SiO2 DBR. The AIN-GaN DBR has 29 periods with insertion of six AIN-GaN superlattice layers showing a crack-free surface morphology and a high peak reflectivity of 99.4% with a stopband of 21 nm. The output power of MCLED is about 11 mu W at an injection current of 7 mA. The electroluminescence has a polarization property with a degree of polarization of about 51 %. |
URI: | http://dx.doi.org/10.1109/LPT.2007.898763 http://hdl.handle.net/11536/10641 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2007.898763 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 19 |
Issue: | 13-16 |
起始页: | 999 |
结束页: | 1001 |
显示于类别: | Articles |
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