標題: | Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors |
作者: | Peng, YC Kao, CC Huang, HW Chu, JT Lu, TC Kuo, HC Wang, SC Yu, CC 光電工程學系 Department of Photonics |
關鍵字: | GaN;microcavity;MCLED;light-emitting diode |
公開日期: | 1-四月-2006 |
摘要: | In this paper, we report a GaN-based microcavity light-emitting diode (MCLED) which is composed of 25 pairs of high-reflectivity GaN/AlN distributed Bragg reflector (DBR) and 6 pairs of ex-situ deposited SiO2/TiO2 dielectric mirrors. The electroluminescence peak of this structure matched well with the high reflectance area of the top and bottom DBRs, and shows a narrow emission of approximately 6.7 nm. The fabricated device also shows a more excellent performance on the stability of the emission peak wavelength while varying injection current density and operating temperature than a regular LED. |
URI: | http://dx.doi.org/10.1143/JJAP.45.3446 http://hdl.handle.net/11536/12461 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.45.3446 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 45 |
Issue: | 4B |
起始頁: | 3446 |
結束頁: | 3448 |
顯示於類別: | 會議論文 |