標題: Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
作者: Peng, YC
Kao, CC
Huang, HW
Chu, JT
Lu, TC
Kuo, HC
Wang, SC
Yu, CC
光電工程學系
Department of Photonics
關鍵字: GaN;microcavity;MCLED;light-emitting diode
公開日期: 1-Apr-2006
摘要: In this paper, we report a GaN-based microcavity light-emitting diode (MCLED) which is composed of 25 pairs of high-reflectivity GaN/AlN distributed Bragg reflector (DBR) and 6 pairs of ex-situ deposited SiO2/TiO2 dielectric mirrors. The electroluminescence peak of this structure matched well with the high reflectance area of the top and bottom DBRs, and shows a narrow emission of approximately 6.7 nm. The fabricated device also shows a more excellent performance on the stability of the emission peak wavelength while varying injection current density and operating temperature than a regular LED.
URI: http://dx.doi.org/10.1143/JJAP.45.3446
http://hdl.handle.net/11536/12461
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.3446
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 4B
起始頁: 3446
結束頁: 3448
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000237570600113.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.