Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 吳耀銓 | en_US |
dc.contributor.author | 陳俞中 | en_US |
dc.date.accessioned | 2014-12-16T06:17:42Z | - |
dc.date.available | 2014-12-16T06:17:42Z | - |
dc.date.issued | 2014-07-21 | en_US |
dc.identifier.govdoc | H01L033/22 | zh_TW |
dc.identifier.govdoc | H01L021/306 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/106549 | - |
dc.description.abstract | 本發明提供一種半導體製程方法,包含下列步驟:提供一成長基板;形成一凹凸結構於該成長基板上;形成一半導體元件層於該凹凸結構上;以及改變該成長基板與該半導體元件層的溫度。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 半導體製程方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | I446583 | zh_TW |
Appears in Collections: | Patents |
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