| 標題: | Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature |
| 作者: | Lin, S. D. Ilchenko, V. V. Marin, V. V. Shkil, N. V. Buyanin, A. A. Panarin, K. Y. Tretyak, O. V. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 25-Jun-2007 |
| 摘要: | The negative differential capacitance (NDC) of Schottky diodes with the layers of InAs quantum dots (QDs) has been clearly observed near room temperature. A simple model involving two zero-dimensional quantum states is proposed to explain the NDC behavior. The simulation results show that the NDC is caused by the fast charging-discharging process in the second states of QDs. |
| URI: | http://dx.doi.org/10.1063/1.2752737 http://hdl.handle.net/11536/10670 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.2752737 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 90 |
| Issue: | 26 |
| 結束頁: | |
| Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
- Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots / Lin, S. D.;Ilchenko, V. V.;Marin, V. V.;Panarin, K. Y.;Buyanin, A. A.
- Room temperature negative differential capacitance in self-assembled quantum dots / Ilchenko, V. V.;Marin, V. V.;Lin, S. D.;Panarin, K. Y.;Buyanin, A. A.
- 量子點負微分電容特性研究 / 林聖迪;LIN SHENG DI
- 在照光下蕭基二極體受到鑲嵌在內部的InAs量子點影響的機制與等效電路模型 / 林真豪;Lin, Chen-Hao;陳振芳;Chen, Jenn-Fang
- Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes / Chen, JF;Chen, NC;Wang, JS;Chen, YF
Loading...