Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping

doi:10.1016/j.microrel.2006.06.004

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DC 欄位	值	語言
dc.contributor.author	Lu, C. Y.	en_US
dc.contributor.author	Lin, H. C.	en_US
dc.contributor.author	Lee, Y. J.	en_US
dc.date.accessioned	2014-12-08T15:13:52Z	-
dc.date.available	2014-12-08T15:13:52Z	-
dc.date.issued	2007-06-01	en_US
dc.identifier.issn	0026-2714	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.microrel.2006.06.004	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10717	-
dc.description.abstract	Negative-bias-temperature instability (NBTI) characteristics of strained p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) under dynamic and AC stressing were investigated in this work. The compressive strain in the channel was deliberately induced by a plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) capping layer in this study. It was found that the capping would degrade the NBTI characteristics, although the degradation is relieved when the stress frequency increases. The aggravated NBTI behaviors are ascribed to the higher amount of hydrogen incorporation during SiN deposition. (c) 2006 Published by Elsevier Ltd.	en_US
dc.language.iso	en_US	en_US
dc.title	Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.microrel.2006.06.004	en_US
dc.identifier.journal	MICROELECTRONICS RELIABILITY	en_US
dc.citation.volume	47	en_US
dc.citation.issue	6	en_US
dc.citation.spage	924	en_US
dc.citation.epage	929	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000247185800011	-
dc.citation.woscount	4	-
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