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dc.contributor.authorYang, Hung-Pin D.en_US
dc.contributor.authorChen, I-Liangen_US
dc.contributor.authorLee, Chen-Hongen_US
dc.contributor.authorChiou, Chih-Hongen_US
dc.contributor.authorLee, Tsin-Dongen_US
dc.contributor.authorHsu, I-Chenen_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChi, Jim Y.en_US
dc.date.accessioned2014-12-08T15:13:52Z-
dc.date.available2014-12-08T15:13:52Z-
dc.date.issued2007-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.L509en_US
dc.identifier.urihttp://hdl.handle.net/11536/10720-
dc.description.abstractWe report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.en_US
dc.language.isoen_USen_US
dc.subjectInGaAsen_US
dc.subjecthighly straineden_US
dc.subjectVCSELen_US
dc.titleHighly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.L509en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume46en_US
dc.citation.issue20-24en_US
dc.citation.spageL509en_US
dc.citation.epageL511en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000247828600012-
dc.citation.woscount1-
Appears in Collections:Articles


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