Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

doi:10.1143/JJAP.46.L509

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Hung-Pin D.	en_US
dc.contributor.author	Chen, I-Liang	en_US
dc.contributor.author	Lee, Chen-Hong	en_US
dc.contributor.author	Chiou, Chih-Hong	en_US
dc.contributor.author	Lee, Tsin-Dong	en_US
dc.contributor.author	Hsu, I-Chen	en_US
dc.contributor.author	Lai, Fang-I	en_US
dc.contributor.author	Lin, Gray	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chi, Jim Y.	en_US
dc.date.accessioned	2014-12-08T15:13:52Z	-
dc.date.available	2014-12-08T15:13:52Z	-
dc.date.issued	2007-06-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.46.L509	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10720	-
dc.description.abstract	We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.	en_US
dc.language.iso	en_US	en_US
dc.subject	InGaAs	en_US
dc.subject	highly strained	en_US
dc.subject	VCSEL	en_US
dc.title	Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.46.L509	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	20-24	en_US
dc.citation.spage	L509	en_US
dc.citation.epage	L511	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000247828600012	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文

文件中的檔案：

000247828600012.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。