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dc.contributor.authorYang, Hung-Pin D.en_US
dc.contributor.authorHsu, I-Chenen_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorLin, Grayen_US
dc.contributor.authorHsiao, Ru-Shangen_US
dc.contributor.authorMaleev, Nikolai A.en_US
dc.contributor.authorBlokhin, Sergej A.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChi, Jim Y.en_US
dc.date.accessioned2014-12-08T15:13:56Z-
dc.date.available2014-12-08T15:13:56Z-
dc.date.issued2007-06-01en_US
dc.identifier.issn0030-4018en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.optcom.2007.01.063en_US
dc.identifier.urihttp://hdl.handle.net/11536/10743-
dc.description.abstractAn InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiberoptic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleBeam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.optcom.2007.01.063en_US
dc.identifier.journalOPTICS COMMUNICATIONSen_US
dc.citation.volume274en_US
dc.citation.issue1en_US
dc.citation.spage94en_US
dc.citation.epage99en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000246191500014-
dc.citation.woscount2-
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