Full metadata record
DC FieldValueLanguage
dc.contributor.authorSu, C. J.en_US
dc.contributor.authorLin, H. C.en_US
dc.contributor.authorTsai, H. H.en_US
dc.contributor.authorHsu, H. H.en_US
dc.contributor.authorWang, T. M.en_US
dc.contributor.authorHuang, T. Y.en_US
dc.date.accessioned2014-12-08T15:14:01Z-
dc.date.available2014-12-08T15:14:01Z-
dc.date.issued2007-05-30en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/18/21/215205en_US
dc.identifier.urihttp://hdl.handle.net/11536/10779-
dc.description.abstractIn this study, a novel multiple-gated (MG) thin-film transistor (TFT) with poly-Si nanowire ( NW) channels is fabricated using a simple process flow. In the proposed new transistors, poly-Si NWs were formed in a self-aligned manner and were precisely positioned with respect to the source/drain, and the side-gate. Moreover, the NW channels are surrounded by three gates, i.e., top-gate, side-gate and bottom-gate, resulting in much stronger gate controllability over the NW channels, and greatly enhanced device performance over the conventional single-gated TFTs. Furthermore, the independently applied top-gate and/or bottom-gate biases could be utilized to adjust the threshold voltage of NW channels in a reliable manner, making the scheme suitable for practical applications.en_US
dc.language.isoen_USen_US
dc.titleOperations of poly-Si nanowire thin-film transistors with a multiple-gated configurationen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/18/21/215205en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume18en_US
dc.citation.issue21en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000246590200005-
dc.citation.woscount11-
Appears in Collections:Articles


Files in This Item:

  1. 000246590200005.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.