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dc.contributor.authorYang, F. M.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorLiu, P. T.en_US
dc.contributor.authorChen, U. S.en_US
dc.contributor.authorYeh, P. H.en_US
dc.contributor.authorYu, Y. C.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorLou, J. C.en_US
dc.date.accessioned2014-12-08T15:14:01Z-
dc.date.available2014-12-08T15:14:01Z-
dc.date.issued2007-05-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2743926en_US
dc.identifier.urihttp://hdl.handle.net/11536/10782-
dc.description.abstractA distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9x10(12)/cm(2), respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 10(6) write/erase cycles. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleNickel nanocrystals with HfO2 blocking oxide for nonvolatile memory applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2743926en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue22en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000246909900036-
dc.citation.woscount38-
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