InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications

doi:10.1016/j.microrel.2010.01.044

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Hung-Pin D.	en_US
dc.contributor.author	Yeh, Zao-En	en_US
dc.contributor.author	Lin, Gray	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chi, Jim Y.	en_US
dc.date.accessioned	2014-12-08T15:14:01Z	-
dc.date.available	2014-12-08T15:14:01Z	-
dc.date.issued	2010-05-01	en_US
dc.identifier.issn	0026-2714	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.microrel.2010.01.044	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10788	-
dc.description.abstract	An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range. (C) 2010 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.microrel.2010.01.044	en_US
dc.identifier.journal	MICROELECTRONICS RELIABILITY	en_US
dc.citation.volume	50	en_US
dc.citation.issue	5	en_US
dc.citation.spage	688	en_US
dc.citation.epage	691	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000278728700026	-
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