標題: On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
作者: Wang, Sheng-Chun
Su, Pin
Chen, Kun-Ming
Lin, Chien-Ting
Liang, Victor
Huang, Guo-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: metal-oxide-semiconductor field effect transistors (MOSFETs);radio frequency (RF);resistance extraction;silicon-on-insulator (SOI) technology
公開日期: 1-May-2007
摘要: We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.
URI: http://dx.doi.org/10.1109/LMWC.2007.895713
http://hdl.handle.net/11536/10872
ISSN: 1531-1309
DOI: 10.1109/LMWC.2007.895713
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 17
Issue: 5
起始頁: 364
結束頁: 366
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