標題: Effects of strained InGaN interlayer on contact resistance between p-GaN and indium tin oxide
作者: Lee, Chi-Ling
Lee, Wei-I
電子物理學系
Department of Electrophysics
公開日期: 30-Apr-2007
摘要: Indium tin oxide (ITO), with its transparency and strong adhesion to GaN, has been used as a replacement for Ni/Au as a contact on p-GaN. However, ITO suffers from high contact resistance on p-GaN. In this work, low contact resistance between ITO and the p-GaN layer was consistently achieved using various strained InGaN layers as the interface layers between ITO and p-GaN layer. The doping of InGaN, whether n type or p type, has a relatively weak effect on the contact resistance as long as the thickness of the InGaN layer is adequately controlled. The secondary-ion-mass spectroscopy depth profile reveals that the n-type InGaN strained contact layer was also heavily doped with Mg. Results of this study demonstrate that the piezoelectric field between InGaN and p-GaN is important in reducing the barrier height of Ohmic contact. (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2737122
http://hdl.handle.net/11536/10879
ISSN: 0003-6951
DOI: 10.1063/1.2737122
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 18
結束頁: 
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