High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate

標題:	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
作者:	Wu, C. H. Hung, B. F. Chin, Albert Wang, S. J. Wang, X. P. Li, M. -F. Zhu, C. Yen, F. Y. Hou, Y. T. Jin, Y. Tao, H. J. Chen, S. C. Liang, M. S. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	HfLaON;Ir3Si;MOSFET;work function
公開日期:	1-四月-2007
摘要:	We report a novel 1000 degrees C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 x 10(-5) A/cm(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm(2)/V center dot s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degrees C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.
URI:	http://dx.doi.org/10.1109/LED.2007.892367 http://hdl.handle.net/11536/10973
ISSN:	0741-3106
DOI:	10.1109/LED.2007.892367
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	28
Issue:	4
起始頁:	292
結束頁:	294
顯示於類別：	期刊論文

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