標題: Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition
作者: Ko, T. S.
Wang, T. C.
Gao, R. C.
Chen, H. G.
Huang, G. S.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
關鍵字: X-ray diffraction;metal-organic chemical vapor deposition;nitrides
公開日期: 15-三月-2007
摘要: Non-polar a-plane (1 1 (2) over bar 0) GaN thin films were grown on r-plane (1 (1) over bar 0 2) sapphire substrates by metal-organic chemical vapor deposition. In order to obtain a-plane GaN films with better crystal quality and surface morphology, detailed comparisons between different growth conditions were investigated. The results showed that high-temperature and low-pressure conditions facilitating two-dimensional growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best mean roughness of the surface morphology was 10.5 angstrom. Various thickness values of AlN nucleation layers and the V/III ratios for growth of the a-plane GaN bulk were also studied to determine the best condition for obtaining a smooth surface morphology of the a-plane GaN layer. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.12.046
http://hdl.handle.net/11536/11025
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.12.046
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 300
Issue: 2
起始頁: 308
結束頁: 313
顯示於類別:期刊論文


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