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dc.contributor.authorLee, M. D.en_US
dc.contributor.authorLo, C. K.en_US
dc.contributor.authorPeng, T. Y.en_US
dc.contributor.authorChen, S. Y.en_US
dc.contributor.authorYao, Y. D.en_US
dc.date.accessioned2014-12-08T15:14:33Z-
dc.date.available2014-12-08T15:14:33Z-
dc.date.issued2007-03-01en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmmm.2006.11.075en_US
dc.identifier.urihttp://hdl.handle.net/11536/11069-
dc.description.abstractBi-stable switching effect has been studied in nickel oxide. lms with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory. (C) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnickel oxideen_US
dc.subjectRRAMen_US
dc.subjectBi-stable memory switching effecten_US
dc.titleEndurance study of switching characteristics in NiO filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jmmm.2006.11.075en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume310en_US
dc.citation.issue2en_US
dc.citation.spageE1030en_US
dc.citation.epageE1031en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000247720400480-
dc.citation.woscount1-
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