Endurance study of switching characteristics in NiO films

doi:10.1016/j.jmmm.2006.11.075

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, M. D.	en_US
dc.contributor.author	Lo, C. K.	en_US
dc.contributor.author	Peng, T. Y.	en_US
dc.contributor.author	Chen, S. Y.	en_US
dc.contributor.author	Yao, Y. D.	en_US
dc.date.accessioned	2014-12-08T15:14:33Z	-
dc.date.available	2014-12-08T15:14:33Z	-
dc.date.issued	2007-03-01	en_US
dc.identifier.issn	0304-8853	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.jmmm.2006.11.075	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11069	-
dc.description.abstract	Bi-stable switching effect has been studied in nickel oxide. lms with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory. (C) 2006 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	nickel oxide	en_US
dc.subject	RRAM	en_US
dc.subject	Bi-stable memory switching effect	en_US
dc.title	Endurance study of switching characteristics in NiO films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.jmmm.2006.11.075	en_US
dc.identifier.journal	JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS	en_US
dc.citation.volume	310	en_US
dc.citation.issue	2	en_US
dc.citation.spage	E1030	en_US
dc.citation.epage	E1031	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000247720400480	-
dc.citation.woscount	1	-
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