標題: Advance static random access memory soft fall analysis using nanoprobing and junction delineation transmission electron microscopy
作者: Chang, Wen-Tung
Hsieh, Tsung-Eong
Zimmermann, Gunnar
Wang, Lars
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2007
摘要: Nanoprobing was used to analyze the soft cell failure of submicron static random access memory (SRAM) at cell level by means of a Zyvex S 100 nanomanipulator system inside a scanning electron microscopy and a multiprobe atomic force probe system, respectively. For the 256 Kbyte dual-port SRAM block, the failure areas exhibit very weak positive-channel field effect transistor drain currents of several magnitudes below the target values, while the drain currents of negative-channel field effect transistor cell transistors are in the expected range. A junction delineation or junction stain was applied to transmission electron microscopy samples to delineate areas with different doping levels so as to make the fail sites visible. Due to the difference in etching behavior of the fail and a reference area, missing lightly doped drain extensions and a partially blocked source/drain implantation were identified as the failure mechanisms. (c) 2007 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2433966
http://hdl.handle.net/11536/11305
ISSN: 1071-1023
DOI: 10.1116/1.2433966
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 25
Issue: 1
起始頁: 202
結束頁: 207
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