標題: | Fabrication of SONOS-type flash memory with the binary high-k dielectrics by the sol-gel spin coating method |
作者: | Ko, Fu-Hsiang You, Hsin-Chiang Chang, Chun-Ming Yang, Wen-Luh Lei, Tan-Fu 材料科學與工程學系奈米科技碩博班 電子工程學系及電子研究所 Graduate Program of Nanotechnology , Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2007 |
摘要: | We fabricated the binary high-k (HfxZr1-xO2) nanocrystal memory using a very simple sol-gel spin coating method and 900 degrees C 60 s rapid thermal annealing (RTA). From the transmission electron microscopy identification, the nanocrystals were formed as the monolayered charge trapping site after 900 degrees C 60 s RTA and the size was ca. 5 nm. We verified the electrical properties in terms of program-erase speed, charge retention, and endurance. The sol-gel device exhibited the long charge retention time of 10(4) s with only 2.5% charge loss, and good endurance performance for program/erase cycles up to 10(5). (c) 2007 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/11331 http://dx.doi.org/10.1149/1.2433705 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.2433705 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 154 |
Issue: | 4 |
起始頁: | H268 |
結束頁: | H270 |
Appears in Collections: | Articles |
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