Two-bit lanthanum oxide trapping layer nonvolatile flash memory

doi:10.1149/1.2737345

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DC 欄位	值	語言
dc.contributor.author	Lin, Yu-Hsien	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.contributor.author	Yang, Tsung-Yuan	en_US
dc.contributor.author	Lei, Tan-Fu	en_US
dc.date.accessioned	2014-12-08T15:15:06Z	-
dc.date.available	2014-12-08T15:15:06Z	-
dc.date.issued	2007	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11336	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.2737345	en_US
dc.description.abstract	This paper describes the two-bit characteristics of SONOS-type memories prepared using lanthanum oxide, a high-k dielectric material, as the trapping layers. We used "channel hot-electron injection" for programming and "band-to-band hot-hole injection" for erasing to perform the memory operations. We observed large memory windows, a relatively high P/E speed, and good retention characteristics for these SONOS-type memories. It appears that La2O3 is an excellent candidate for use as the trapping layer in SONOS-type memories. (C) 2007 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Two-bit lanthanum oxide trapping layer nonvolatile flash memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.2737345	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	154	en_US
dc.citation.issue	7	en_US
dc.citation.spage	H619	en_US
dc.citation.epage	H622	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000246892000063	-
dc.citation.woscount	27	-
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