標題: Bias temperature instabilities for low-temperature polycrystalline silicon complementary thin-film transistors
作者: Chen, Chih-Yang
Lee, Jam-Wem
Ma, Ming-Wen
Chen, Wei-Cheng
Lin, Hsiao-Yi
Yeh, Kuan-Lin
Wang, Shen-De
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: The degradation mechanisms of both negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) were studied for low-temperature polycrystalline silicon complementary thin-film transistors. Measurements show that both NBTI and PBTI are highly bias dependent; however, the effect of the temperature is only functional on the NBTI stress. Furthermore, instead of interfacial trap-state generation during the NBTI stress, the PBTI stress passivates the interface trap states. We conclude that the diffusion-controlled electrochemical reactions dominate the NBTI degradation while charge trapping in the gate dielectric controls the PBTI degradation. (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11337
http://dx.doi.org/10.1149/1.2742810
ISSN: 0013-4651
DOI: 10.1149/1.2742810
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 8
起始頁: H704
結束頁: H707
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