完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hung, Chi-Chao | en_US |
dc.contributor.author | Oates, Anthony S. | en_US |
dc.contributor.author | Lin, H. C. | en_US |
dc.contributor.author | Chang, Percy | en_US |
dc.contributor.author | Wang, J. L. | en_US |
dc.contributor.author | Huang, C. C. | en_US |
dc.contributor.author | Yau, Y. W. | en_US |
dc.date.accessioned | 2014-12-08T15:15:12Z | - |
dc.date.available | 2014-12-08T15:15:12Z | - |
dc.date.issued | 2007 | en_US |
dc.identifier.isbn | 978-1-4244-0918-1 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11434 | - |
dc.identifier.uri | http://dx.doi.org/10.1109/RELPHY.2007.369985 | en_US |
dc.description.abstract | This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | MIM capacitor | en_US |
dc.subject | capacitance degradation | en_US |
dc.subject | charge trapping | en_US |
dc.subject | metal-insulator interlayer | en_US |
dc.title | New understanding of metal-insulator-metal (MIM) capacitor degradation behavior | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/RELPHY.2007.369985 | en_US |
dc.identifier.journal | 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | en_US |
dc.citation.spage | 630 | en_US |
dc.citation.epage | 631 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000246989600126 | - |
顯示於類別: | 會議論文 |