完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHung, Chi-Chaoen_US
dc.contributor.authorOates, Anthony S.en_US
dc.contributor.authorLin, H. C.en_US
dc.contributor.authorChang, Percyen_US
dc.contributor.authorWang, J. L.en_US
dc.contributor.authorHuang, C. C.en_US
dc.contributor.authorYau, Y. W.en_US
dc.date.accessioned2014-12-08T15:15:12Z-
dc.date.available2014-12-08T15:15:12Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-0918-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/11434-
dc.identifier.urihttp://dx.doi.org/10.1109/RELPHY.2007.369985en_US
dc.description.abstractThis work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.en_US
dc.language.isoen_USen_US
dc.subjectMIM capacitoren_US
dc.subjectcapacitance degradationen_US
dc.subjectcharge trappingen_US
dc.subjectmetal-insulator interlayeren_US
dc.titleNew understanding of metal-insulator-metal (MIM) capacitor degradation behavioren_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RELPHY.2007.369985en_US
dc.identifier.journal2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUALen_US
dc.citation.spage630en_US
dc.citation.epage631en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000246989600126-
顯示於類別:會議論文


文件中的檔案:

  1. 000246989600126.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。