標題: | ESD-protection design with extra low-leakage-current diode string for RF circuits in SiGeBiCMOS process |
作者: | Ker, Ming-Dou Hsiao, Yuan-Wen Wu, Woei-Lin 電機學院 College of Electrical and Computer Engineering |
關鍵字: | electrostatic discharge (ESD);modified resistor-shunted diode string (MR diode string);MR trigger bipolar ESD power clamp;power-rail ESD clamp circuit;resistor-shunted diode string (RS diode string);RS trigger bipolar ESD power clamp |
公開日期: | 1-十二月-2006 |
摘要: | Two low-leakage resistor-shunted diode strings Eire developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes. |
URI: | http://dx.doi.org/10.1109/TDMR.2006.883153 http://hdl.handle.net/11536/11497 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2006.883153 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 6 |
Issue: | 4 |
起始頁: | 517 |
結束頁: | 527 |
顯示於類別: | 期刊論文 |