標題: ESD-protection design with extra low-leakage-current diode string for RF circuits in SiGeBiCMOS process
作者: Ker, Ming-Dou
Hsiao, Yuan-Wen
Wu, Woei-Lin
電機學院
College of Electrical and Computer Engineering
關鍵字: electrostatic discharge (ESD);modified resistor-shunted diode string (MR diode string);MR trigger bipolar ESD power clamp;power-rail ESD clamp circuit;resistor-shunted diode string (RS diode string);RS trigger bipolar ESD power clamp
公開日期: 1-十二月-2006
摘要: Two low-leakage resistor-shunted diode strings Eire developed for use as power clamps in silicon-germanium (SiGe) BiCMOS technology. The resistors are used to bias the deep N-wells, significantly reducing the leakage current from the diode string. A methodology for selecting the values of the bias resistors is presented. For further reduction of the leakage current, an alternate design is presented: the resistor-shunted trigger bipolar power clamp. The power-clamp circuits presented herein may be used in cooperation with small double diodes at the I/O pins to achieve whole-chip electrostatic-discharge protection for RF ICs in SiGe processes.
URI: http://dx.doi.org/10.1109/TDMR.2006.883153
http://hdl.handle.net/11536/11497
ISSN: 1530-4388
DOI: 10.1109/TDMR.2006.883153
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 6
Issue: 4
起始頁: 517
結束頁: 527
顯示於類別:期刊論文


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