完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Huang, Jyun-Siang | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:15:32Z | - |
dc.date.available | 2014-12-08T15:15:32Z | - |
dc.date.issued | 2006-11-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.8656 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11632 | - |
dc.description.abstract | In this paper, fully depleted silicon-on-insulator (SOI) devices with source/drain extension shifts and a high-kappa offset spacers were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current I-off significantly by utilizing the extra electron barrier height in the source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current In is also sacrificed simultaneously. To overcome this drawback, a high-kappa offset spacer is used to increase the on-state driving current I-on effectively by enhancing the vertical fringing electric field which elevates the channel voltage drop and reduces series resistance. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | silicon-on-insulator (SOI) | en_US |
dc.subject | S/D extension shift | en_US |
dc.subject | high-kappa offset spacer dielectric | en_US |
dc.subject | fringing electric field | en_US |
dc.title | High-kappa material sidewall with source/drain-to-gate non-overlapped structure for low standby power applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.45.8656 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 8656 | en_US |
dc.citation.epage | 8658 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000242323200025 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |