Ultra low-capacitance bond pad for RF applications in CMOS technology

doi:10.1109/RFIC.2007.380888

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DC Field	Value	Language
dc.contributor.author	Hsiao, Yuan-Wen	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.date.accessioned	2014-12-08T15:15:49Z	-
dc.date.available	2014-12-08T15:15:49Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0530-5	en_US
dc.identifier.issn	1529-2517	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11801	-
dc.identifier.uri	http://dx.doi.org/10.1109/RFIC.2007.380888	en_US
dc.description.abstract	A low-capacitance bond pad for gigahertz RF applications is proposed. Three kinds of on-chip inductors embedded under the traditional bond pad are used to compensate bond-pad capacitance. Experimental results have verified that bond-pad capacitance can be significantly reduced in a specific frequency band due to the cancellation effect provided by the embedded inductor in the proposed bond pad. The proposed bond pad is fully compatible to general CMOS processes without any process modification.	en_US
dc.language.iso	en_US	en_US
dc.subject	bond pad	en_US
dc.subject	capacitance	en_US
dc.subject	signal loss	en_US
dc.subject	radiofrequency integrated circuit (RFIC)	en_US
dc.title	Ultra low-capacitance bond pad for RF applications in CMOS technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RFIC.2007.380888	en_US
dc.identifier.journal	2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers	en_US
dc.citation.spage	303	en_US
dc.citation.epage	306	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000248148800068	-
Appears in Collections:	Conferences Paper

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