標題: Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique
作者: Cheng, Chih-Chang
Lin, J. F.
Wang, Tahui
Hsieh, T. H.
Tzeng, J. T.
Jong, Y. C.
Liou, R. S.
Pan, Samuel C.
Hsu, S. L.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot-carrier degradation;lateral diffused MOS (LDMOS);three-region charge pumping (CP)
公開日期: 1-九月-2006
摘要: Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (Nit) and bulk oxide charge Q(ox) creation in the channel and in the drift regions separately. The growth rates of N-it and Q(ox) are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I-g stress causes the largest drain current and subthreshold slope degradation because of both N-it generation in the channel and Q(ox) creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.
URI: http://dx.doi.org/10.1109/TDMR.2006.883834
http://hdl.handle.net/11536/11808
ISSN: 1530-4388
DOI: 10.1109/TDMR.2006.883834
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 6
Issue: 3
起始頁: 358
結束頁: 363
顯示於類別:期刊論文


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