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dc.contributor.authorWu, C. H.en_US
dc.contributor.authorHung, B. F.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorWang, S. J.en_US
dc.contributor.authorYen, F. Y.en_US
dc.contributor.authorHou, Y. T.en_US
dc.contributor.authorJin, Y.en_US
dc.contributor.authorTao, H. J.en_US
dc.contributor.authorChen, S. C.en_US
dc.contributor.authorLiang, M. S.en_US
dc.date.accessioned2014-12-08T15:15:52Z-
dc.date.available2014-12-08T15:15:52Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.880659en_US
dc.identifier.urihttp://hdl.handle.net/11536/11851-
dc.description.abstractThe authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.en_US
dc.language.isoen_USen_US
dc.subjectHfSien_US
dc.subjectHfSiONen_US
dc.subjectn-MOSFETsen_US
dc.titleHfSiON n-MOSFETs using low-work function HfSi chi gateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.880659en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue9en_US
dc.citation.spage762en_US
dc.citation.epage764en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240008800018-
dc.citation.woscount4-
Appears in Collections:Articles


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