| 標題: | Characterization of the low temperature activated P+/N junction formed by implant into silicide method |
| 作者: | Chang, Kow-Ming Lin, Jian-Hong Yang, Chih-Hsiang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 2007 |
| URI: | http://hdl.handle.net/11536/12078 |
| ISBN: | 978-1-4244-1891-6 |
| 期刊: | 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 |
| 起始頁: | 640 |
| 結束頁: | 641 |
| Appears in Collections: | Conferences Paper |
- Characterization of the low temperature activated N(+)/P junction formed by implant into silicide method / Chang, Kow-Ming;Lin, Jian-Hong;Yang, Chih-Hsiang
- CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES / JUANG, MH;CHENG, HC
- Formation of cobalt silicided shallow junction using implant into through silicide technology and low temperature furnace annealing / Chen, BS;Chen, MC
- Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method / Chang, Kow-Ming;Lin, Jian-Hong;Sun, Cheng-Yen
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