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dc.contributor.authorWu, CHen_US
dc.contributor.authorHung, BFen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorWang, SJen_US
dc.contributor.authorYen, FYen_US
dc.contributor.authorHou, YTen_US
dc.contributor.authorJin, Yen_US
dc.contributor.authorTao, HJen_US
dc.contributor.authorChen, SCen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:16:30Z-
dc.date.available2014-12-08T15:16:30Z-
dc.date.issued2006-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.874778en_US
dc.identifier.urihttp://hdl.handle.net/11536/12203-
dc.description.abstractThe authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.en_US
dc.language.isoen_USen_US
dc.subjectHfAlONen_US
dc.subjectMOSFETen_US
dc.subjectYbSien_US
dc.titleHfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicideen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.874778en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue6en_US
dc.citation.spage454en_US
dc.citation.epage456en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000238070500010-
dc.citation.woscount8-
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