HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide

doi:10.1109/LED.2006.874778

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, CH	en_US
dc.contributor.author	Hung, BF	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Wang, SJ	en_US
dc.contributor.author	Yen, FY	en_US
dc.contributor.author	Hou, YT	en_US
dc.contributor.author	Jin, Y	en_US
dc.contributor.author	Tao, HJ	en_US
dc.contributor.author	Chen, SC	en_US
dc.contributor.author	Liang, MS	en_US
dc.date.accessioned	2014-12-08T15:16:30Z	-
dc.date.available	2014-12-08T15:16:30Z	-
dc.date.issued	2006-06-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2006.874778	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12203	-
dc.description.abstract	The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.	en_US
dc.language.iso	en_US	en_US
dc.subject	HfAlON	en_US
dc.subject	MOSFET	en_US
dc.subject	YbSi	en_US
dc.title	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2006.874778	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	6	en_US
dc.citation.spage	454	en_US
dc.citation.epage	456	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000238070500010	-
dc.citation.woscount	8	-
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