標題: A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer
作者: Huang, HW
Kao, CC
Chang, YA
Kuo, HC
Laih, LH
Wang, SC
光電工程學系
Department of Photonics
關鍵字: As+-implanted;oxide-confined;VCSEL;wet-thermal oxidation
公開日期: 10-May-2006
摘要: We report the utilization of an selective As+-implanted underlying layer and regrowth method to enhance and control the wet thermal oxidation rate for 850 nm oxide-confined VCSEL. The oxidation rate of the As'-implanted device showed a four-fold increase over the non-implanted one at the As' dosage of 1 x 10(16) cm(-1) and the oxidation temperature of 400 degrees C. The 50 side-by-side As'-implanted oxide-confined VCSELs fabricated using the method achieved very uniform performance with a deviation in threshold current Of Delta I-th similar to 0.2 mA and slope-efficiency of Delta S.E. similar to 3%. Finally, we accumulated life test data for oxide-confined VCSELs with As'-implanted underlying layer up to 1000 h at 80 degrees C/15 mA. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2005.05.046
http://hdl.handle.net/11536/12255
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2005.05.046
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 97
Issue: 1
起始頁: 10
結束頁: 13
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